Otros links

Laboratorio SIMS y Análisis de Superficies 

  • Investigación
  • Análisis de Corrosión
  • Caracterización de Materiales
  • Análisis de Muestras Biológicas
  • Galería de Fotos

Publicaciones SIMS

1) O. V. Aleksandrov, Yu. A. Nikolaev, N. A. Sobolev, V. I. Sakharov, I. T. Serenkov, and Yu. A. Kudryavtsev, Redistribution of erbium during the crystallization of buried amorphous silicon layers, Semiconductors, June 1999, Volume 33, Issue 6 pp. 606-609,

2) I.O.Usov, A.A.Suvorova, V.V.Sokolov, Yu.A.Kudriavtsev, A.V.Suvorov, Transient enhanced diffusion of aluminum in SiC during high temperature ion implantation, J.Appl.Phys. V.86, N11 (1999), pp. 6039 - 6042

3) Yu.Kudriavtsev, Maximum concentration of implanted projectiles during ion sputtering of a sample surface, Nucl. Instrum and Method B160 (2000), pp.307-310

4) Sugiyama T, Chaisitsak S, Yamada A, Konagai M, Kudriavtsev Y, Godines A, Villegas A, Asomoza R, Formation of pn homojunction in Cu(InGa)Se-2 thin film solar cells by Zn doping, JPN J APPL PHYS 1 39: (8) p. 4816-4819 AUG 2000,

5) Yu.Kudriavtsev, A.Villegas, A.Godines, P.Ecker, R.Asomoza, S. Nikishin, C.Jin, N.Faleev, H.Temkin, SIMS study of GaAsN/GaAs multiple quantum wells, Surface Interface Analysis, 29, (2000) pp.399-402

6) Yuriy Kudriavtsev and Rene Asomoza, Work function change caused by alkali ion sputtering of a sample surface, Appl. Surface Sci. 167 (2000), p.12-17 ci=0

7) Konagai M, Tsushima T, Kim MK, Asakusa K, Yamada A, Kudriavtsev Y, Villegas A, Asomoza R, High-rate deposition of silicon thin-film solar cells by the hot-wire cell method, THIN SOLID FILMS 395:(1-2) 152-156,(2001)

8) Rosendo E, Rodriguez AG, Navarro-Contreras H, Vidal MA, Asomoza R, Kudriavtsev Y, Growth of strained-layer GaAs/Ge super lattices by magnetron sputtering: Optical and structural characterization, J APPL PHYS 89: (6) 3209-3214, 2001 ,

9) S. Nikishin, G. Kipshidze, V. Kuryatkov, K. Choi, Ìu. Gherasoiu, L. Grave de Peralta, A. Zubrilov, V. Tretyakov, K. Copeland, T. Prokofyeva, M. Holtz, R. Asomoza, Yu.Kudryavtsev, and H. Temkin, Gas source molecular beam epitaxy of high quality AlxGa1-xN (0 <= x <= 1) on Si(111), J. Vac. Sci. Technol. B 191409-1412(2001)

10) G. Kipshidze, V. Kuryatkov, B.Borisov, R. Asomoza, Yu. Kudryavtsev, S. Nikishin, and H. Temkin, Mg and O codoping in p-type GaN and AlxGa1-xN (0<x<0.08), Appl. Phys. Let., V.80, N16, (April, 2002), p.2910-2912

11) E. Rosendo, A. G. Rodríguez, H. Navarro-Contreras, M. A. Vidal, R. Asomoza and Y. Kudriavtsev, Structural characterization of semi-strained layer (GaAs)1-x(Si2)x/GaAs multilayers grown by magnetron sputtering, Thin Solid Films, Volume 416, Issues 1-2, 2 September 2002, Pages 49-53

12) A.Villegas, Yu. Kudriavtsev, A.Godines, R. Asomoza, Work function change caused by alkali ion sputtering, Appl. Surf. Sci., V.203-204, (2003) p.94-97

13) Yu. Kudriavtsev, A.Villegas, A.Godines, R.Asomoza, Emission of CsM+ clusters, Appl. Surf. Sci., V. 206, (2003) p. 187-195

14) I. Usov, N.Parikh, Y.Kudriavtsev, R.Asomoza, Z.Reitmeier, R.Davis, GaN evaporation and enhanced diffusion of Ar during high-temperature ion implantation, J. Appl. Phys., V.93, N9, (2003), p.5140-5142

15) Yu.Kudriavtsev, A.Villegas, A.Godines, R. Asomoza, I.Usov, Quantitative SIMS analysis of SiC, Surf.Interface Anal., V.35 (2003)p. 491-495

16) V.Kuryatkov, K.Zhu, B.Borisov, A.Chandolu, Iu.Gherasoiu, G.Kipshidze, S.N.G.Chu, M.Holtz, Yu.Kudriavtsev, R.Asomoza, S.Nikishin, H.Temkin, Electrical properties of p-n junctions based on super lattices of AlN/AlGa(In)N, Appl. Phys. Let. V.83, N7 (2003), pp.1319-1321

17) O.V. Alexandrov, Yu.A. Nikolaev, N.A.Sobolev, R. Asomoza, Yu. Kudriavtsev, A.Villegas, A.Godines, Redistribution of ytterbium and oxygen during annealing of silicon layer amorphized by implantation, Semiconductors, V37, I.12,(2003), pp.1363-1366

18)J.A. Godines, A.Villegas, Yu.Kudriavtsev, R.Asomoza, A. Morales-Acevedo, A.Escamilla,G.Arriaga, H.Hernandes-Contreras, G.Contreras-Puente, J.Vidal, M.Chavarria, R.Fragoso-Soriano, Comparative SIMS analysis of solar cell structures grown by pulsed laser ablation and ion sputtering, Semicond.Sci.Technol.,19 (2004), p. 213-218

19) R.Hernandez-Zarazua, M.Hernandez-Sustaita, F.de Anda, V.A.Mishurnyi, A.Yu.Gorbachev, R.Asomoza, Yu.Kudriavtsev, J.A.Godines, Investigation of the phase diagram of the Pb-Ga-Sb system, Thin Solid Film, V.461, I.2, (2004), p.233-236

20) I.O. Usov, A.A. Suvorova, Y.A. Kudriavtsev, A.V. Suvorov Diffusion of Boron in 6H and 4H SiC coimplanted With Boron and Nitrogen Ions”, J. Appl. Phys. 96 (9), (2004), pp.4960-4964

21) Yu.Kudriavtsev, A.Villegas, A.Godines, R. Asomoza, Calculation of the surface binding energy of particles, sputtered from a solid, Appl.Surf.Sci.239, (2005), pp. 273-278

22) Rodriguez-Torres MDPGorbatchev AYMishurnyi VA, de Anda F, Mendez-Garcia VHAsomoza RKudriavtsev YHernandez IC, Investigation of the "composition-pulling or lattice-latching" effect in LPE, JOURNAL OF CRYSTAL GROWTH 277 (1-4), (2005) pp.138-142

23) Borisov BKuryatkov VKudryavtsev YAsomoza RNikishin SSong DYHoltz MTemkin H, Si-doped AlxGa1-xN(0.56 <= x <= 1) layers grown by molecular beam Epitaxy with ammonia, APPLIED PHYSICS LETTERS 87 (13): (2005), Art. No. 132106

24) Yu.Kudriavtsev, A.Villegas, A.Godines, R. Asomoza, SIMS ANALYSIS OF RESIDUAL GAS ELEMENTS WITH A CAMECA IMS-6F ION MICROPROBE, Appl. Surf. Sci., V.252, N10, (2006), pp.3406-3412

25) A.Kosarev, A.Torres, Y.Hernandez, R.Ambrosio, C.Zuniga, T.E.Felter, R.Asomoza, Yu.Kudriavtsev, R.Silva-Gonzalez, E.Gomez-Barojas, A.Ilinski, A.S.Abramov, Silicon-germanium films deposited by low-frequency plasma-enhanced chemical vapor deposition: Effect of H2 and Ar dilution, Journal of Material Research, V.21, N1, (2006), pp.88-104

26) Kuryatkov VBorisov BNikishin SKudryavtsev YAsomoza R, Kuchinskii V.I., Sokolovskii G.S., Song D.Y., Holtz M, 247 nm solar-blind ultraviolet p-i-n photo detectors, J. Appl. Phys., 100, N 096104 (2006)

27) K. Matsune, H. Oda, T.Toyama, H.Okamoto, Yu.Kudriavtsev, R.Asomoza, 15% Efficiency CdS/CdTe thin film solar cells using CdS layers doped with metal organic compounds, Solar Energy Materials & Solar Cells, 90(2006), pp. 3108–3114

28) Sanchez, L.Kosarev, A.Torres, A.Ilinskii, A.Kudriavtsev, Y.Asomoza, R.Cabarrocas, P.R.I.Abramov, A., Study of GeYSi1 - Y:H films deposited by low frequency plasma, Thin Solid Films
Vol. 515, Issue 19, 2007, Pp. 7603-7606

29) S.Gallardo, Yu.Kudriavtsev, A.Villegas, A.Godines, R. Asomoza, “SIMS study of Modern Semiconductor Heterostructures”, Proceedings of 3rd Int. Conference of Electrical and Electronic Engineering ICEEE-2006, Veracruz, Mexico, Sept. 6-8, 2006, pp. 290-293.

30) Yu.Kudriavtsev, A.Villegas, S.Gallardo, R. Asomoza. Probability of ionization of sputtered particles as a function of their energy Part I: Negative Si− ions Appl. Surf. Sci., 254 (2008), pp. 2059-2066

31) Yu.Kudriavtsev, A.Villegas, S.Gallardo, G.Ramirez, R. Asomoza, Probability of ionization of sputtered particles as a function of their energy Part II: Positive Si+ ions Appl. Surf. Sci., 254 (2008), pp. 3801-3807

32) Y. Kudriatsev a,*, A. Villegas a, S. Gallardo a, G. Ramirez a, R. Asomoza a, V. Mishurnuy b, Cesium ion sputtering with oxygen flooding: Experimental SIMS study of work function change, Appl. Surf. Sci., 254 (2008), pp. 4019-5298

33) Yuriy Kudriavtsev, Rene Asomoza, Collision cascade temperature, Nuclear Instruments and Methods in Physics Research B 266 (2008), pp. 3540–354

34) Y. Kudriavtsev, S.Gallardo, A.Villegas, G.Ramirez, and R.Asomoza, Depth–Profiling analysis of Nanostructures by SIMS: Depth Resolution Function, Bulletin of the Russian Academy of Sciences: Physics, 2008, Vol.72, N7, pp. 895-898

35) Y. Kudriavtsev, S. Gallardo, A. Villegas, G. Ramirez, R. Asomoza, Critical distance for secondary ion formation: Experimental SIMS measurements, Applied Surface Science, V 255 (2008), pp. 877–879

36) S.Gallardo, Y.Kudriatsev, A.Villegas, G.Ramırez, R.Asomoza, E. Cruz-Hernandez, J.S.Rojas-Ramirez, M.Lopez-Lopez, SIMS characteriza-tion of segregation in InAs/GaAs heterostructures, Applied Surface Science, V 255 (2008), pp. 1341–1344

37) O.Koudriavtseva, A.Morales-Acevedo, Yu.Kudriavtsev, S.Gallardo, R.Asomoza, R.Mendoza-Perez, J.Sastre-Hernandez, G.Contreras-Puente, SIMS depth profiling analysis of halogens in CdTe/CdS/TSO solar cells using Cs2M+ cluster ions, Applied Surface Science, V 255 (2008), pp. 1423–1426

38) V. M. Korol’, Yu. Kudriavtsev, A. V. Zastavnoy, S. A. Vedenyapin, Characterization of Silicon Doped with Sodium upon High-Voltage Implantation, Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2009, Vol. 3, No. 2, pp. 292–297.

39) Yu. Kudriavtsev and R. Asomoza, Refined “Statistical” Model of Secondary Ion Formation, Technical Physics, 2009, Vol. 54, No. 11, pp. 1566–1570

40) Kudriavtsev, Y., Gallardo, S., Villegas, A., Ramirez, G., Luna, M., Aguilar, M., Asomoza, R.Analytical study of the obsidian hydration process, REVISTA MEXICANA DE FISICA, Volume: 56,Issue: 3 Pages: 204-207, Published: JUN 2010

41) Yu. Kudriavtsev, S. Gallardo, O. Koudriavtseva, A. Escobosa, V. M. Sanchez–R, M. Avendano, R. Asomoza and M. Lopez-Lopez, SIMS depth profiling of semiconductor interfaces: Experimental study of depth resolution function,

DOI 10.1002/sia.3708

International congress proceedings Published

1999

1) Yu. Kudriavtsev, R.Asomoza, Emission of CsM+ clusters, SIMS-XII, 12th International Conference on Secondary Ion Mass Spectrometry and Related Topics, Brussels, Belgic, Sept 4-10, 1999, poster

2) Yu. Kudriavtsev, P.Ecker, A.Godines, A.Villegas , R.Asomoza, S. Nikishin, C.Jin, N.Faleev, H.Temkin, SIMS study of GaAsN/GaAs multiple quantum wells, SIMS-XII, 12th International Conference on Secondary Ion Mass Spectrometry and Related Topics, Brussels, Baltic, Sept 4-10, 1999, poster

3) A.Villegas, P.Ecker, A.Godines, Yu. Kudriavtsev, R.Asomoza, "La Técnica D-SIMS una herramienta en la investigación de materiales (D-SIMS technique as a tool in materials investigation", ICAM-1999, VI International Materials Research Congress, Cancún, August29/Sept.2, 1999, poster.

4) A.Villegas, P.Ecker, A.Godines, Yu. Kudriavtsev, R.Asomoza, D-SIMS analysis: a tool to materials research, 11th Int. Conference on Thin Films, 19th Congress of the Mexican Vacuum and Surface Science Society, August 30/ Sept.3, Cancun, Mexico, 1999, oral

2000

1) A.Godines, A.Villegas, Yu. Kudriavtsev, R.Asomoza, SIMS Depth profiling of multilayer structures, Int. Conference on Surface and Vacuum, Oaxaca, August, 1999, poster

2) A.Villegas, A.Godines, Yu. Kudriavtsev, R.Asomoza, SIMS analysis of nitrogen in SiC, Int. Conference on Surface and Vacuum, Oaxaca, August, 1999, poster

2001

1) A.Godines, A.Villegas, Yu.Kudriavtsev, R.Asomoza, Quantitative SIMS analysis of SiC, ICAM-2001, VIII Int. Conference on Advanced Materials, Cancun, August 26-30, 2001, oral

2) Yu. Kudriavtsev, A.Godines, A.Villegas, R.Asomoza, Yu Nikolaev, N.Sobolev, SIMS study of REE implanted silicon, ICAM-2001, VIII Int.Conference on Advanced Materials, Cancun, August 26-30, 2001, poster

3) A.Godines, A.Villegas, Yu. Kudriavtsev, R. Asomoza, A.Escamilla E., G. Arriaga, M. Chavarria, G. Contreras, J. Vidal, SIMS study of solar cell structures formed by II-VI semiconductores, XLIV Congresso Nacional de Física, Morelia, Michoacan, Oct.15-19, 2001, poster

4) A.Villegas, Yu. Kudriavtsev, A.Godines, R. Asomoza, Work function change caused by alkali ion sputtering, SIMS-XIII, 13th International Conference on Secondary Ion Mass Spectrometry and Related Topics, Nara, Japan, November 11-16, 2001, poster

5) G. Kipshidze, S. Nikishin, V. Kuryatkov, and H. Temkin, R. Asomoza, Yu. Kudryavtsev, Heavily doped p-type GaN and AlGaN grown by gas source molecular beam epitaxy with ammonia. The Fourth International Conference on Nitride Semiconductors, Denver, Colorado USA, July 16-20, 2001, oral

2002

1) Yu. Kudriavtsev, A.Godines, A.Villegas, R.Asomoza, Radiation

enhanced diffusion in GaN, XXXII International Conference on Ion-Crystal Interaction, Moscow, May, 27th to 29th , 2002, posTer

2) I.Usov, N.Parikh, D.Thomson, Z.Reitmeier, R.Davis, Yu.Kudriavtsev, R.Asomoza, Dose and implantation temperature influence on disorder produced by Ar+ ion implantation into GaN, 14th International Conference on Ion Implantation Tachnology, IIT-2002, Taos, NM, USA, Sept. 22nd to 27th, 2002, oral

3) Yu. Kudriavtsev, A.Godines, A.Villegas, R.Asomoza, Yu Nikolaev, N.Sobolev, SIMS study of Er implanted AlGaN/GaN superlattice, XXII Congreso Nacional de Ciencia de Superficies y Vacio, Veracruz, Sept.,30 al Oct.04, 2002, poster

3) A.Godines, Yu. Kudriavtsev, A.Villegas, R.Asomoza, SIMS analysis of P shallow implanted Si, XXII Congreso Nacional de Ciencia de Superficies y Vacio, Veracruz, Sept. 30 al Oct.04, 2002, poster

4) A.Villegas, Yu. Kudriavtsev, A.Godines, R.Asomoza, Yu Nikolaev, N.Sobolev, SIMS study of Yb implanted silicon, XLV Congreso Nacional de Fisica, Leon, Gto., Oct. 28 al Nov. 01, 2002, poster

6) A.Godines, Yu. Kudriavtsev, A.Villegas, R.Asomoza, Morales A.A., Escamilla E., G. Arriaga, M. Chavarria, G. Contreras, J. Vidal, Hernandez H.C., Comparative SIMS analysis of solar cells grown by Laser Ablation and Ion sputtering deposition, XLV Congreso Nacional de Fisica, Leon, Gto., Oct. 28 al Nov. 01, 2002, oral

7) A.Godines, Yu. Kudriavtsev, A.Villegas, R.Asomoza, SIMS analysis of multilayer structures, AVS 49th International Symposium, Denver, Co., US, Nov. 04th to 08th, 2002, poster

2003

1) A.Villegas, Yu. Kudriavtsev, A.Godines, R.Asomoza, SIMS analysis of residual gas elements, 25th Annual Symposium on Applied Surface Analysis, June 3-6, 2003, Illinois, US, Abstract book, p.74

2) Yu. Kudriavtsev, A.Villegas, A.Godines, R.Asomoza, The surface binding energy of particles, sputtered from a solid, XVI International Conference on “Ion Surface Interaction, ISI-2003”, Zvenigorod, Russia, August, 25-29, 2003,

3) Yu. Kudriavtsev, A.Villegas, A.Godines, R.Asomoza, SIMS analysis of metal/metal and metal/semiconductor interfaces, XVI International Conference on “Ion Surface Interaction, ISI-2003”, Zvenigorod, Russia, August, 25-29, 2003

4) A.Godines, Yu. Kudriavtsev, A.Villegas, R.Asomoza, Analytical Study of Organic Field Effect Transistors, XXIII Congreso Nacional de Ciencia de Superficies y Vacio, Huatulco, Sept. 29 al Oct.04, 2003, p.

5) A.Godines, Yu. Kudriavtsev, A.Villegas, R.Asomoza, SIMS analysis of thin dielectric films, XXIII Congreso Nacional de Ciencia de Superficies y Vació, Huatulco, Sept. 29 al Oct.04, 2003, p.70

2004

1) Yu. Kudriavtsev, A.Villegas, R.Asomoza, R. Fragoso, SIMS Depth Profiling Analysis of semiconductor multilayers. XIII International Materials Research Congress, Cancun, Mexico 22-26 August 2004, Abstract Book, Symposium 13 “Surface Engineering and Thin Films” p.21

2) Yu. Kudriavtsev, A.Villegas, A.Godines, R.Asomoza, R.Fragoso,

Experimental and Theoretical Study of SIMS Depth Resolution Function, SIMS Europe 2004, Munster, Germany, Sept.26-29, 2004, Abstract Book, p. 14

3) A.Villegas, Yu. Kudriavtsev, A.Godines, R.Asomoza, Cancun, Ionization probability of sputtered atoms as a function of their energy: experimental SIMS study, Sociedad Mexicana de Ciencia y Tecnologia de Superficies y Materiales, XXIV Congreso Annual, Riviera Maya, Mexico, Sep. 27 a 30, 2004, p. 40

4) M.Galvan-Arellano, A.R.M.Cruz, J. Dias Reyes, A. Munos Hernández, R.Pena, Yu.Kudriavtsev, Desarrollo de contactos ohmicos para semiconductores III-V con barrera de difusión de Pd, Sociedad Mexicana de Ciencia y Tecnologia de Superficies y Materiales, XXIV Congreso Annual, Riviera Maya, Mexico, Sep. 27 a 30, 2004,p.56

2005

1) Yu.Kudriavtsev, A.Villegas, A.Godines, R. Asomoza, Influence of oxygen flooding on the work function and the secondary ion yield during cesium ion sputtering of silicon surface, Proceedings of XVII International Conference on “Ion Surface Interaction, ISI-2005”, Zvenigorod, Russia, August, 25-29, 2005, V1, pp.403-406

2) Yu.Kudriavtsev, A.Villegas, A.Godines, R. Asomoza, Ionization probability of sputtered Si atoms as a function of their energy, Proceedings of XVII International Conference on “Ion Surface Interaction, ISI-2005”, Zvenigorod, Russia, August, 25-29, 2005, V1, pp.340-343

3) Yu. Kudriavtsev, A.Villegas, A.Godines, S.Gallardo, R.Asomoza,

Ionization probability of sputtered particles as a function of their energy, International Conference on Secondary Ion Mass Spectrometry, SIMS XV, Manchester, UK, September 12-16, Abstract Book, p. 18

4) Yu. Kudriavtsev, V. Mishurnuy, A.Villegas, A.Godines, R.Asomoza,

The “second life” of Cameca cesium ionizer, International Conference on Secondary Ion Mass Spectrometry, SIMS XV, Manchester, UK, September 12-16, Abstract Book, p. 304

5) A.Godines, Yu. Kudriavtsev, A.Villegas, S.Gallardo, R.Asomoza,

VM Korol, SIMS study of isotopic effects for Li implantation in Si and Ge crystals, XXV Congreso Nacional de Sociedad Mexicana de Ciencia y Tecnología de Superficie y Materiales, Zacatecas, México, Septiembre, 26-30, 2005, Libro de Resúmenes, p.58

2006

1) S.Gallardo, Yu.Kudriavtsev, A.Villegas, A.Godines, R. Asomoza, “SIMS study of Modern Semiconductor Heterostructures”, Proceedings of 3rd Int. Conference of Electrical and Electronic Engineering ICEEE-2006, Veracruz, Mexico, Sept. 6-8, 2006, pp. 290-293

2) Yu.Kudriavtsev, S.Gallardo, A.Villegas, A.Godines, R. Asomoza, New analytical Form for SIMS Depth Resolution Function, 5th European Workshop on Secondary Ion Mass Spectrometry, SIMS Europe 2006, Munster, Germany, Sep. 24-26, 2006, Abstract Book, p. 30

3) Yu.Kudriavtsev, S.Gallardo, A.Villegas, A.Godines, R. Asomoza, Experimental and Theoretical Study of Ionization probability of sputtered particles as a function of their energy, 5th European Workshop on Secondary Ion Mass Spectrometry, SIMS Europe 2006, Munster, Germany, Sep. 24-26, 2006, Abstract Book, p. 43

4) Yu.Kudriavtsev, S.Gallardo, A.Villegas, A.Godines, R. Asomoza, SIMS depth profiling analysis of semiconductor heterostructures, XVIII Latin America Symposium on Solid State Physics, SLAFES-06, Puebla, Mexico, Nov. 20-24, 2006, Abstract Book, p. TUP 98

5) S.Gallardo, Yu.Kudriavtsev, A.Villegas, A.Godines, R. Asomoza, Real depth distribution of phosphorus shallow implanted in silicon, XVIII Latin America Symposium on Solid State Physics, SLAFES-06, Puebla, Mexico, Nov. 20-24, 2006, Abstract Book, p. THP 144

2007

1) Yu. Kudriavtsev, S.Gallardo, A.Villegas, G.Ramirez, R. Asomoza, Critical distance of secondary ion formation: experimental SIMS measurement, International Conference on Secondary Ion Mass Spectrometry, SIMS-2007, Kanazawa, Japan, Oct.29 – Nov. 2, 2007, p.89

2) S.Gallardo, Yu. Kudriavtsev, A.Villegas, G.Ramirez, R. Asomoza, E.Cruz-Hernandez, J.S.Rojas-Ramirez, M.Lopez-Lopez SIMS study of In segregation in InAs/GaAs Heterostructures. International Conference on Secondary Ion Mass Spectrometry, SIMS-2007, Kanazawa, Japan, Oct.29 – Nov. 2, 2007, p.327

3) Yu. Kudriavtsev, R. Asomoza, On secondary ion formation during ion sputtering, International Conference on Secondary Ion Mass Spectrometry, SIMS-2007, Kanazawa, Japan, Oct.29 – Nov. 2, 2007, p.201

4) O.Koudriavtseva, A. Morales, Yu.Kudriavtsev, S.Gallardo, A.Villegas, G.Ramirez, R. Asomoza, SIMS depth profiling analysis of halogens in CdTe/CdS/TSO Solar Cells, International Conference on Secondary Ion Mass Spectrometry, SIMS-2007, Kanazawa, Japan, Oct.29 – Nov. 2, 2007, p.116

5) S.Gallardo, Yu. Kudriavtsev, R. Asomoza, E.Cruz-Hernandez, J.S.Rojas-Ramirez, M.Lopez-Lopez, Structural characterization of InAs/GaAs Heterostructures grown by MBE. XVI international Material Research Congress, Cancun, Mexico, 19-23 August, 2007, Symposium 6, p.30

6) M.Lopez-Lopez, J. Hernandez-Rosasa, S.Gallardo, Yu. Kudriavtsev, E.Cruz-Hernandez, J.S.Rojas-Ramirez, Qrowth and characterization of InAs quantum wells. XVI internacional Material Research Congress, Cancun, Mexico, 19-23 August, 2007, Symposium 1, p.10

7) S.Gallardo, Yu. Kudriavtsev, A.Villegas, G.Ramirez, R. Asomoza, Advantages and limitations of 3-D analysis with SIMS. XVI internacional Material Research Congress, Cancun, Mexico, 19-23 August, 2007, Symposium 6, p.31.

8) S.Gallardo, I.Mejia, Yu. Kudriavtsev, A.Villegas, G.Ramirez, M.Estrada, R. Asomoza, SIMS study of contaminants at a polymeric heterojunction. XXVII Congreso Nacional Oaxaca, Oaxaca, 24-28 de Septiembre, 2007, p.204

9) S.Gallardo, Yu. Kudriavtsev, A.Villegas, E.Cruz-Hernandez, J.S.Rojas-Ramirez, M.Lopez-Lopez, SIMS determination of segregation length at InAs/GaAs heterojunction. XXVII Congreso Nacional Oaxaca, Oaxaca, 24-28 de Septiembre, 2007, p.31.

¡Contactanos!

Dr. Iouri Koudriavtsev
Investigador de la SEES, Cinvestav
Laboratorio SIMS
Tel. 5747 3800 ext. 6255, 6250
Email. yuriyk@cinvestav.mx ; yuri_kudr@hotmail.com

Dr. René Asomoza Palacio
Investigador de la SEES, Cinvestav
Laboratorio SIMS
Tel. 5747 3800 ext. 1411
Email. rasomoza@cinvestav.mx

M. en C. María Georgina Ramírez Cruz
Auxiliar de Investigación
Tel. 5747 3800 ext. 6250, 6255
Email. gramirez@cinvestav.mx; ingeoramirez@yahoo.com.mx